MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

740mW 40V 1.5Ω@10V 1 P-Channel P-Channel TO-92-3 Single FETs, MOSFETs RoHS
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27 in stock
#C629200
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹307.23 | ₹307.23 |
| 10+ | ₹300.29 | ₹3,002.90 |
| 30+ | ₹295.52 | ₹8,865.60 |
| 100+ | ₹290.76 | ₹29,076.00 |
1 × ₹307.23
₹307.23
excl. GST
₹362.53 incl. 18% GST
TP0606N3-G-P002
₹307.23 for 1 + GST
The TP0604 low-threshold enhancement-mode (normally-on) transistor employs a Vertical Double-diffused Metal Oxide Semiconductor (VDMOS) structure combined with a proven silicon-gate fabrication process. This combination gives the device the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As a characteristic of all MOS structures, this device is immune to thermal runaway and thermally induced second breakdown. Microchip's vertical DMOS FETs are well suited for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock