MICROCHIP

TP2640N3-G

P-Channel 400V Through Hole TO-92-3

TO-92-3RoHSActive

MOSFET P-CH 400V TO-92-3

Manufacturer: MICROCHIP
Manufacturer part #: TP2640N3-G
Store part #: C632592
Package / case: TO-92-3
Category: Single FETs, MOSFETs
Packaging: Bag-packed

Datasheet (PDF)

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4 in stock

#C632592

Stock & price checked 3 days ago

Quantity	Unit price	Pack price
1+	₹670.97	₹670.97
10+	₹656.45	₹6,564.50
30+	₹646.62	₹19,398.60
100+	₹637.00	₹63,700.00

Quantity (min 1)

1 × ₹670.97

₹670.97

excl. GST

₹791.74 incl. 18% GST

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Standard pack: 1,000 per bag

TP2640N3-G

₹670.97 for 1 + GST

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Specifications

Output Capacitance(Coss): 50pF
Ciss-Input Capacitance: 300pF
Pd - Power Dissipation: 1W
Drain to Source Voltage: 400V
Operating Temperature: -55℃~+150℃
Current - Continuous Drain(Id): 180mA
Reverse Transfer Capacitance (Crss): 12pF
RDS(on): 15Ω@4.5V
Number: 1 P-Channel
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 2V
Type: P-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
ECCN: EAR99
Packaging: Bag-packed
Standard pack: 1,000 / Bag
Sold per: Piece
Minimum order: 1
Unit weight: 0.25 g

Overview

The TP2640 is a low-threshold, Enhancement-mode (normally-off) transistor that uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.