MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
TECH PUBLICDatasheet (PDF)
TPSIR510DP-T1-GE3
180W 100V 130A 3.6mΩ@10V 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs
PDFN-8(5x6)RoHSActive
- Manufacturer
- TECH PUBLIC
- Manufacturer part #
- TPSIR510DP-T1-GE3
- Store part #
- C52205254
- Package / case
- PDFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
199 in stock
#C52205254
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹128.98 | ₹128.98 |
| 10+ | ₹103.45 | ₹1,034.50 |
| 30+ | ₹90.78 | ₹2,723.40 |
| 100+ | ₹78.12 | ₹7,812.00 |
| 500+ | ₹70.61 | ₹35,305.00 |
| 1,000+ | ₹66.75 | ₹66,750.00 |
1 × ₹128.98
₹128.98
excl. GST
₹152.20 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
TPSIR510DP-T1-GE3
₹128.98 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.3nF
- Ciss-Input Capacitance
- 7.3nF
- Pd - Power Dissipation
- 180W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 130A
- Reverse Transfer Capacitance (Crss)
- 260pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 65nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.139 g
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