MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
UF3C120150B7S
D2PAK-7 Single FETs, MOSFETs
D2PAK-7RoHSActive
- Manufacturer
- onsemi
- Manufacturer part #
- UF3C120150B7S
- Store part #
- C45082714
- Package / case
- D2PAK-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8 in stock
#C45082714
Stock & price checked 20 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,154.61 | ₹1,154.61 |
| 10+ | ₹1,125.09 | ₹11,250.90 |
| 30+ | ₹1,105.42 | ₹33,162.60 |
| 100+ | ₹1,085.75 | ₹1,08,575.00 |
1 × ₹1,154.61
₹1,154.61
excl. GST
₹1,362.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per reel
UF3C120150B7S
₹1,154.61 for 1 + GST
Specifications
- Gate Charge(Qg)
- 25.7nC
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
This SiC FET device is based on a unique cascode circuit configuration, co-packaging a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET. The device features standard gate drive characteristics and serves as a drop-in replacement for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-263-7 package, it offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Applications
- Telecom and server power supplies
- Industrial power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Key features
- On-resistance RDS(on): 150 mΩ (typical)
- Operating temperature: 175℃ (maximum)
- Excellent reverse recovery characteristics: Qrr = 67 nC
- Low body diode forward voltage drop: 1.46 V
- Low gate charge: QG = 25.7 nC
- Threshold voltage VG(th): 4.4 V (typical), supports 0 to 15 V gate drive
- Package creepage distance and clearance > 6.1 mm
- Kelvin source pin for optimized switching performance
- ESD protection, Human Body Model Level 2
- Lead-free, halogen-free, RoHS compliant
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