MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
VBM1202M
N-Channel 200V 10A 110W Through Hole ITO-220AB-3
ITO-220AB-3RoHSActive
MOSFET N-CH 200V 10A ITO-220AB-3
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBM1202M
- Store part #
- C481004
- Package / case
- ITO-220AB-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
87 in stock
#C481004
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹92.37 | ₹92.37 |
| 10+ | ₹75.20 | ₹752.00 |
| 50+ | ₹66.40 | ₹3,320.00 |
| 100+ | ₹57.82 | ₹5,782.00 |
| 500+ | ₹52.79 | ₹26,395.00 |
| 1,000+ | ₹50.06 | ₹50,060.00 |
1 × ₹92.37
₹92.37
excl. GST
₹109.00 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
VBM1202M
₹92.37 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 200V
- Output Capacitance(Coss)
- 430pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 1.3nF
- Pd - Power Dissipation
- 110W
- Reverse Transfer Capacitance (Crss)
- 130pF
- RDS(on)
- 200mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.8 g
Overview
Key features
- Surface mount
- Low-profile through-hole
- Available in tape and reel
- Dynamic dV/dt rating
- 150 °C operating temperature
- Fast switching
- Fully avalanche rated
Alternatives
Similar parts — check the datasheet before substituting.
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