MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
VBZMB18N65
N-Channel 650V 18A 68W Through Hole TO-220F-3
TO-220F-3RoHSActive
MOSFET N-CH 650V 18A TO-220F-3
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBZMB18N65
- Store part #
- C700734
- Package / case
- TO-220F-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
70 in stock
#C700734
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹181.85 | ₹181.85 |
| 10+ | ₹151.50 | ₹1,515.00 |
| 50+ | ₹122.36 | ₹6,118.00 |
| 100+ | ₹103.41 | ₹10,341.00 |
| 500+ | ₹95.02 | ₹47,510.00 |
| 1,000+ | ₹91.22 | ₹91,220.00 |
1 × ₹181.85
₹181.85
excl. GST
₹214.58 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
VBZMB18N65
₹181.85 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 205pF
- Current - Continuous Drain(Id)
- 18A
- Ciss-Input Capacitance
- 3.322nF
- Pd - Power Dissipation
- 68W
- Reverse Transfer Capacitance (Crss)
- 120pF
- RDS(on)
- 360mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.34 g
Overview
UTC 20N70K-MT is an N-channel power MOSFET utilizing advanced technology to deliver ultra-low on-resistance and superior switching performance. UTC 20N70K-MT is typically used in high-efficiency DC-DC converters, PWM motor control, bridge circuits, and similar applications.
Applications
- High-efficiency DC-DC converters
- PWM motor control
- Bridge circuits
Key features
- Reduced reverse recovery time (trr), reverse recovery charge (Qrr), and peak reverse recovery current (IRRM)
- Low figure of merit (FOM): on-resistance (R\text on) × gate charge (Qg)
- Low input capacitance (Ciss)
- Low switching losses due to reduced reverse recovery charge (Qrr)
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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