DIODES

ZXTNS618MCTA

Bipolar (BJT) Transistor NPN 20V 4.5A 140MHz 19.6W Surface Mount DFN-8-EP(2x3)

DFN-8-EP(2x3)ROHS CompliantDiscontinued

TRANS NPN 20V 4.5A DFN-8-EP(2x3)

Manufacturer: DIODES
Manufacturer part #: ZXTNS618MCTA
Store part #: C445510
Package / case: DFN-8-EP(2x3)
Category: Single Bipolar Transistors
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

49 in stock

#C445510

Stock & price checked 3 days ago

Quantity	Unit price	Pack price
1+	₹222.16	₹222.16
10+	₹217.29	₹2,172.90
30+	₹214.05	₹6,421.50
100+	₹210.79	₹21,079.00

Quantity (min 1)

1 × ₹222.16

₹222.16

excl. GST

₹262.15 incl. 18% GST

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Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 3,000 per reel

ZXTNS618MCTA

₹222.16 for 1 + GST

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Specifications

Current - Collector Cutoff: 100nA
Operating Temperature: -55℃~+150℃
Transition frequency(fT): 140MHz
Collector - Emitter Voltage VCEO: 20V
Emitter-Base Voltage VEBO: 7V
DC Current Gain: 450
Pd - Power Dissipation: 19.6W
Current - Collector(Ic): 4.5A
Number: 1 NPN
type: NPN
Vce Saturation(VCE(sat)): 150mV

Packaging & compliance

RoHS: ROHS Compliant
Lifecycle: Discontinued
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.023 g

Overview

Applications

DC – DC Converters
Charging circuits
Mobile phones
Motor control
Portable applications

Key features

BVCEO > 20V
lC = 4.5A Continuous Collector Current
Low Saturation Voltage (150mV max @ 1A)
RsAT = 47mΩ for a low equivalent On-Resistance
hFE characterized up to 6A for high current gain hold up
BVR > 40V
lFAV = 3A Average Peak Forward Current
Low VF < 500mV (@1A) for reduced power loss
Fast switching due to Schottky barrier
Low profile 0.8mm high package for thin applications
RθJA efficient, 40% lower than SOT26
6mm² footprint, 50% smaller than TSOP6 and SOT26
Lead-Free, RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability

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