MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HANGYU MICROELECTRONICSDatasheet (PDF)
12N65
650V 12A 51W 600mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- HANGYU MICROELECTRONICS
- Manufacturer part #
- 12N65
- Store part #
- C55079896
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
510 in stock
#C55079896
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹58.24 | ₹291.20 |
| 50+ | ₹47.84 | ₹2,392.00 |
| 150+ | ₹43.38 | ₹6,507.00 |
| 500+ | ₹37.82 | ₹18,910.00 |
| 2,000+ | ₹35.35 | ₹70,700.00 |
| 5,000+ | ₹33.87 | ₹1,69,350.00 |
5 × ₹58.24
₹291.20
excl. GST
₹343.62 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
12N65
₹291.20 for 5 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 160pF
- Current - Continuous Drain(Id)
- 12A
- Ciss-Input Capacitance
- 2.19nF
- Pd - Power Dissipation
- 51W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 600mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 42nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 2.592 g
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