MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
ANHIDatasheet (PDF)
ADP120N080G2
1.2kV 35A 188W 100mΩ 1 N-channel N-Channel TO-220 Single FETs, MOSFETs
TO-220RoHSActive
1200V N-Channel Silicon Carbide Power MOSFET
- Manufacturer
- ANHI
- Manufacturer part #
- ADP120N080G2
- Store part #
- C22470090
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
42 in stock
#C22470090
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹461.54 | ₹461.54 |
| 10+ | ₹394.61 | ₹3,946.10 |
| 50+ | ₹354.86 | ₹17,743.00 |
| 100+ | ₹314.65 | ₹31,465.00 |
| 500+ | ₹295.97 | ₹1,47,985.00 |
| 1,000+ | ₹287.71 | ₹2,87,710.00 |
1 × ₹461.54
₹461.54
excl. GST
₹544.62 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
ADP120N080G2
₹461.54 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 62pF
- Current - Continuous Drain(Id)
- 35A
- Ciss-Input Capacitance
- 1.377nF
- Pd - Power Dissipation
- 188W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 100mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 58nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.92 g
Same category
