MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
ANHIDatasheet (PDF)
ADQ120N080G2
1.2kV 35A 188W 100mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs
TO-247-4LRoHSActive
1200V N-Channel Silicon Carbide Power MOSFET
- Manufacturer
- ANHI
- Manufacturer part #
- ADQ120N080G2
- Store part #
- C5440043
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
64 in stock
#C5440043
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,327.74 | ₹1,327.74 |
| 10+ | ₹1,184.43 | ₹11,844.30 |
| 30+ | ₹1,097.20 | ₹32,916.00 |
| 90+ | ₹1,028.34 | ₹92,550.60 |
1 × ₹1,327.74
₹1,327.74
excl. GST
₹1,566.73 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
ADQ120N080G2
₹1,327.74 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 62pF
- Current - Continuous Drain(Id)
- 35A
- Ciss-Input Capacitance
- 1.377nF
- Pd - Power Dissipation
- 188W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 100mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 58nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.7 g
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