MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
ANHIDatasheet (PDF)
ASW60R029EFD
N-Channel 650V 90A 500W Through Hole TO-247
TO-247RoHSActive
MOSFET N-CH 650V 90A TO-247
- Manufacturer
- ANHI
- Manufacturer part #
- ASW60R029EFD
- Store part #
- C19192886
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
53 in stock
#C19192886
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹821.17 | ₹821.17 |
| 10+ | ₹711.43 | ₹7,114.30 |
| 30+ | ₹644.51 | ₹19,335.30 |
| 100+ | ₹588.44 | ₹58,844.00 |
1 × ₹821.17
₹821.17
excl. GST
₹968.98 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
ASW60R029EFD
₹821.17 for 1 + GST
Specifications
- Configuration
- Half-Bridge
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 165.6pF
- Current - Continuous Drain(Id)
- 90A
- Ciss-Input Capacitance
- 8.001nF
- Pd - Power Dissipation
- 500W
- Reverse Transfer Capacitance (Crss)
- 0.44pF
- RDS(on)
- 29mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 153.3nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.896 g
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