Varnitronics
HGSEMI

AT24C08DQ2/TR-HG

8Kbit I2C DFN-8(2x2) Memory

DFN-8(2x2)RoHSActive
Manufacturer
HGSEMI
Manufacturer part #
AT24C08DQ2/TR-HG
Store part #
C52953107
Package / case
DFN-8(2x2)
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

3,995 in stock

#C52953107

Stock & price checked 22 h ago

QuantityUnit pricePack price
5+₹14.33₹71.65
50+₹11.38₹569.00
150+₹9.90₹1,485.00
500+₹8.80₹4,400.00
2,500+₹7.91₹19,775.00
4,000+₹7.46₹29,840.00

5 × ₹14.33

₹71.65

excl. GST

₹84.55 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

AT24C08DQ2/TR-HG

₹71.65 for 5 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Features
Noise suppression function;Built-in power-on reset (POR);Hardware write protection function
Memory Size
8Kbit
Voltage - Supply
1.7V~5.5V;0.8mA
Clock Frequency
400kHz;1MHz
Access Time
0.9us
Data Retention - TDR (Year)
100 Years
Write Cycle Time(tWC)
5ms
Standby Supply Current
1uA
Write Cycle Endurance
1,000,000 cycles
Interface
I2C

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Moisture sensitivity
MSL 3 (168 hours)
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.183 g

Overview

AT24C08/AT24C16 is an I²C-compatible serial EEPROM device. It contains an 8K-bit (1K-byte) / 16K-bit (2K-byte) memory array with a 16-byte page size.

Key features

  • Single supply voltage with high-speed mode
  • Minimum operating voltage down to 1.7V
  • 400kHz/1MHz clock support over 1.7V to 5.5V range
  • Low-power CMOS technology
  • Read current 0.2mA (400kHz, typical)
  • Write current 0.8mA (400kHz, typical)
  • Schmitt trigger with filtered inputs for noise suppression
  • Sequential and random read modes
  • Page write mode with partial page write support
  • Write protection for entire memory array
  • Additional writeable lockable page
  • Self-timed write cycle (5ms max)
  • High reliability
  • Endurance: 1,000,000 write cycles
  • Data retention: 100 years
  • HBM: 4kV
  • Latch-up immunity: ±200mA (25°C)
  • Packages: DIP-8, SOP-8, TSSOP-8, SOT-23-5, DFN-8, MSOP-8

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