Varnitronics
AT24C512CP064 GREENMICRO
GREENMICRO

AT24C512CP064

512Kbit 1MHz I2C DIP-8 Memory

DIP-8RoHSActive
Manufacturer
GREENMICRO
Manufacturer part #
AT24C512CP064
Store part #
C51026310
Package / case
DIP-8
Category
Memory
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

1,915 in stock

#C51026310

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹52.72₹52.72
10+₹46.21₹462.10
50+₹43.39₹2,169.50
100+₹39.70₹3,970.00
500+₹38.20₹19,100.00
1,000+₹37.32₹37,320.00

1 × ₹52.72

₹52.72

excl. GST

₹62.21 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 50 per tube

AT24C512CP064

₹52.72 for 1 + GST

Specifications

Operating Temperature
-40℃~+85℃
Features
Hardware write protection function;Noise suppression function;Page write protection function
Memory Size
512Kbit
Voltage - Supply
1.8V~5.5V;1mA
Clock Frequency
1MHz
Access Time
0.9us
Data Retention - TDR (Year)
100 Years
Write Cycle Time(tWC)
5ms
Standby Supply Current
10uA
Write Cycle Endurance
1 million cycles
Interface
I2C

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tube-packed
Standard pack
50 / Tube
Sold per
Piece
Minimum order
1
Unit weight
0.658 g

Overview

24C512 is an automotive-grade I2C-compatible serial EEPROM device. It contains a 512Kbit (64K byte) memory array organized as 128 bytes per page.

Key features

  • Single-supply voltage with high-speed operation: minimum operating voltage down to 1.7V; supports 1MHz clock at 2.5V to 5.5V; supports 400kHz clock at 1.7V to 5.5V.
  • Low-power CMOS technology: read current 0.3mA (400kHz, typical); write current 1.0mA (400kHz, typical).
  • Schmitt trigger inputs with noise-suppression filtering.
  • Sequential and random read modes.
  • 128-byte page write mode with partial page write support.
  • Write protection for the entire memory array.
  • Additional writeable lockable page.
  • Self-timed write cycle (5ms maximum).
  • High reliability: 1 million write cycle endurance; 100-year data retention; 6kV HBM ESD protection; latch-up immunity ±200mA.
  • Package options: SOP8, TSSOP8, UDFN8.

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