AT25SF081B-SSHB-T

Adesto AT25SF081B is a serial interface Flash memory device designed for a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25SF081B also is ideal for data storage, eliminating the need for additional data storage devices. The AT25SF081B erase block sizes are optimized to meet the needs of today's code and data storage applications. This means memory space can be used much more efficiently. Because certain code modules and data storage segments must reside in their own erase regions, the wasted and unused memory space that occurs with large-block-erase Flash memory devices can be reduced greatly. This increased memory space allows additional code routines and data storage segments to be added, while maintaining the same overall device density. This device also contains three Security Register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. These pages can be locked individually.

Key features

• Serial Peripheral Interface (SPI) Compatible
• Supports SPI modes 0 and 3 (1,1,1)
• Supports dual input and dual output operation (1,1,2)
• Supports quad input and quad output operation (1,1,4)
• Supports quad XiP (continuous read mode) operation (1,4,4 and 0,4,4)
• 108 MHz Maximum Operating Frequency
• Two options available:
• 2.7 V ~ 3.6 V Supply Voltage
• 2.5 V ~ 3.6 V Supply Voltage
• Serial Flash Discoverable Parameters (SFDP, JDES216B) support
• OTP Memory
• Three Protected Programmable Security Register Pages (Page size: 256 bytes)
• 64-bit factory programmable UID register
• Hardware Write Protection (WP pin)
• Software Write protection (Programmable non-volatile control registers)
• Program and Erase Suspend and Resume
• Byte programming size: up to 256 bytes
• Erase Size and Duration
• Uniform 4-kbyte Block Erase (70 ms typical)
• Uniform 32-kbyte Block Erase (150 ms typical)
• Uniform 64-kbyte Block Erase (250 ms typical)
• Full Chip Erase (4 seconds typical)
• Low Power Dissipation
• Standby Current (25 μA maximum)
• Deep Power-Down Current (12 μA maximum)
• Endurance: 100,000 Program and Erase Cycles
• Data Retention: 20 Years
• Industrial Temperature Range (-40 °C to 85 °C)
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
• 8-lead SOIC (0.150” Narrow and 0.208” Wide)
• 8-pad Ultra-Thin UDFN (2×3×0.6 mm)
• Die Wafer Form