Varnitronics
AT45DB161E-SSHD-T RENESAS
RENESAS

AT45DB161E-SSHD-T

16Mbit 2.3V~3.6V 85MHz SPI SOIC-8 Memory RoHS

SOIC-8ROHS CompliantActive

SPI Serial Flash Memory

Manufacturer
RENESAS
Manufacturer part #
AT45DB161E-SSHD-T
Store part #
C66279
Package / case
SOIC-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,089 in stock

#C66279

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹278.61₹278.61
10+₹235.68₹2,356.80
30+₹208.80₹6,264.00
100+₹181.26₹18,126.00
500+₹168.91₹84,455.00
1,000+₹163.48₹1,63,480.00

1 × ₹278.61

₹278.61

excl. GST

₹328.76 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

AT45DB161E-SSHD-T

₹278.61 for 1 + GST

Specifications

Operating Temperature
-40℃~+85℃
Features
Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size
16Mbit
Voltage - Supply
2.3V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
85MHz
Data Retention - TDR (Year)
20 Years
Standby Supply Current
25uA
Interface
SPI

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.09 g

Overview

Key features

  • Single 2.3 V
  • 3.6 V or 2.5 V
  • 3.6 V supply - Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation - Continuous read capability through entire array
  • Up to 85 MHz
  • Low - power read option up to 15 MHz
  • Clock - to - output time (t_V) of 6 ns maximum
  • User - configurable page size
  • 512 bytes per page
  • 528 bytes per page (default)
  • Page size can be factory pre - configured for 512 bytes
  • Two fully independent SRAM data buffers (512/528 bytes)
  • Allows receiving data while reprogramming the main memory array
  • Flexible programming options
  • Byte/Page Program (1 to 512/528 bytes) directly into main memory
  • Buffer Write
  • Buffer to Main Memory Page Program
  • Flexible erase options
  • Page Erase (512/528 bytes)
  • Block Erase (4 kB)
  • Sector Erase (128 kB)
  • Chip Erase (16 Mbits)
  • Program and Erase Suspend/Resume
  • Advanced hardware and software data protection features
  • Individual sector protection
  • Individual sector lockdown to make any sector permanently read - only
  • 128 - byte, One - Time Programmable (OTP) Security Register
  • 64 bytes factory programmed with a unique identifier
  • 64 bytes user programmable
  • Hardware and software controlled reset options
  • JEDEC Standard Manufacturer and Device ID Read
  • Low - power dissipation
  • 400 nA Ultra - Deep Power - Down current (typical)
  • 5 µA Deep Power - Down current (typical)
  • 25 µA Standby current (typical)
  • 7 mA Active Read current (typical @ 15 MHz)
  • Endurance: 100,000 program/erase cycles per page minimum
  • Data retention: 20 years
  • Complies with full industrial temperature range
  • Green (Pb/Halide - free/RoHS compliant) packaging options
  • 8 - lead SOIC (0.150" wide and 0.208" wide)
  • 8 - pad Ultra - thin DFN (5 x 6 x 0.6mm)
  • 11 - ball Wafer Level Chip Scale Package
  • Die in Wafer Form (contact factory for availability)

Alternatives

Similar parts — check the datasheet before substituting.

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