MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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BestirpowerDatasheet (PDF)
BCZ120N21M1
N-Channel 1.2kV 100A 469W Through Hole TO-247-4
TO-247-4ROHS CompliantActive
BCZ120N21M1 N-channel Silicon Carbide Power MOSFET
- Manufacturer
- Bestirpower
- Manufacturer part #
- BCZ120N21M1
- Store part #
- C42401699
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
60 in stock
#C42401699
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹533.50 | ₹533.50 |
| 10+ | ₹449.26 | ₹4,492.60 |
| 30+ | ₹399.11 | ₹11,973.30 |
| 90+ | ₹348.52 | ₹31,366.80 |
| 510+ | ₹325.15 | ₹1,65,826.50 |
| 990+ | ₹314.44 | ₹3,11,295.60 |
1 × ₹533.50
₹533.50
excl. GST
₹629.53 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
BCZ120N21M1
₹533.50 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 224pF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 3.741nF
- Pd - Power Dissipation
- 469W
- Reverse Transfer Capacitance (Crss)
- 17pF
- RDS(on)
- 21mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 198nC
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.427 g
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