Varnitronics
ROHM

BR25H010FVM-2CTR

1Kbit 10MHz SPI MSOP-8 Memory RoHS

MSOP-8ROHS3 CompliantActive
Manufacturer
ROHM
Manufacturer part #
BR25H010FVM-2CTR
Store part #
C5955345
Package / case
MSOP-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,999 in stock

#C5955345

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹91.49₹91.49
10+₹72.90₹729.00
30+₹63.70₹1,911.00
100+₹54.51₹5,451.00
500+₹49.16₹24,580.00
1,000+₹46.17₹46,170.00

1 × ₹91.49

₹91.49

excl. GST

₹107.96 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

BR25H010FVM-2CTR

₹91.49 for 1 + GST

Specifications

Operating Temperature
-40℃~+125℃
Features
Hardware write protection function;Built-in power-on reset (POR);Software write protection function;Page write protection function;Noise suppression function
Memory Size
1Kbit
Voltage - Supply
2.5V~5.5V;4mA
Clock Frequency
10MHz
Data Retention - TDR (Year)
100 Years
Write Cycle Time(tWC)
4ms
Standby Supply Current
10uA
Write Cycle Endurance
1,000,000 cycles
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.149 g

Overview

BR25H010 - 2C is a serial EEPROM with SPI bus interface.

Key features

  • High-speed clock operation up to 10MHz (max)
  • Wait function via HOLDB pin
  • Partial or full memory array programmable as read-only
  • 2.5V to 5.5V single-supply operation, ideal for battery-powered applications
  • Page write mode for writing initial values at factory shipment
  • Compatible with SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
  • Self-timed programming cycle
  • Low supply current
  • Write operation (5V): 1.0mA (typ.)
  • Read operation (5V): 1.0mA (typ.)
  • Standby operation (5V): 0.1μA (typ.)
  • Auto-increment address during read operation
  • Write error protection
  • Write inhibit at power-on
  • Write inhibit via command code (WRDI)
  • Write inhibit via WPB pin
  • Write-protected block configuration via status register (BP1, BP0)
  • Write error prevention at low voltage
  • Available in MSOP8, TSSOP-B8, SOP8, SOP-J8 packages
  • Factory default data: memory array: FFh, status register BP1, BP0: 0
  • Data retention exceeding 100 years
  • Write endurance exceeding 1,000,000 cycles
  • AEC-Q100 qualified

Alternatives

Similar parts — check the datasheet before substituting.

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