MDD(Microdiode Semiconductor)
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₹2.32
26,12,850 in stock
FUXINSEMIDatasheet (PDF)
C3M0016120D
1.2kV 115A 556W 22.3mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs
TO-247-3RoHSActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- FUXINSEMI
- Manufacturer part #
- C3M0016120D
- Store part #
- C22365193
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3 in stock
#C22365193
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,115.21 | ₹2,115.21 |
| 10+ | ₹2,012.45 | ₹20,124.50 |
| 30+ | ₹1,834.35 | ₹55,030.50 |
| 90+ | ₹1,679.14 | ₹1,51,122.60 |
1 × ₹2,115.21
₹2,115.21
excl. GST
₹2,495.95 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
C3M0016120D
₹2,115.21 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 230pF
- Current - Continuous Drain(Id)
- 115A
- Ciss-Input Capacitance
- 6.085nF
- Pd - Power Dissipation
- 556W
- Reverse Transfer Capacitance (Crss)
- 13pF
- RDS(on)
- 22.3mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 207nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.6V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.107 g
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