MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
Wuxi China Resources Huajing MicroelectronicsDatasheet (PDF)
CS4N60A8HD
N-Channel 600V 4A 75W Through Hole ITO-220AB-3
ITO-220AB-3RoHSActive
MOSFET N-CH 600V 4A ITO-220AB-3
- Manufacturer
- Wuxi China Resources Huajing Microelectronics
- Manufacturer part #
- CS4N60A8HD
- Store part #
- C162400
- Package / case
- ITO-220AB-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
12 in stock
#C162400
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹38.99 | ₹38.99 |
| 10+ | ₹30.73 | ₹307.30 |
| 50+ | ₹27.20 | ₹1,360.00 |
| 100+ | ₹22.80 | ₹2,280.00 |
| 500+ | ₹20.82 | ₹10,410.00 |
| 1,000+ | ₹19.65 | ₹19,650.00 |
1 × ₹38.99
₹38.99
excl. GST
₹46.01 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
CS4N60A8HD
₹38.99 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 55pF
- Ciss-Input Capacitance
- 544pF
- Pd - Power Dissipation
- 75W
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 8.5pF
- RDS(on)
- 2.3Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 14.5nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.88 g
Same category
