MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
Wuxi China Resources Huajing MicroelectronicsDatasheet (PDF)
CS4N80A3HD-G
N-Channel 800V 4A 100W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 800V 4A TO-251
- Manufacturer
- Wuxi China Resources Huajing Microelectronics
- Manufacturer part #
- CS4N80A3HD-G
- Store part #
- C2833626
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1 in stock
#C2833626
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹74.48 | ₹74.48 |
| 10+ | ₹58.52 | ₹585.20 |
| 30+ | ₹51.82 | ₹1,554.60 |
| 75+ | ₹43.18 | ₹3,238.50 |
| 525+ | ₹39.29 | ₹20,627.25 |
| 975+ | ₹37.14 | ₹36,211.50 |
1 × ₹74.48
₹74.48
excl. GST
₹87.89 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 75 per tube
CS4N80A3HD-G
₹74.48 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 82pF
- Ciss-Input Capacitance
- 865pF
- Pd - Power Dissipation
- 100W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 7.5pF
- RDS(on)
- 2.8Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 75 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.36 g
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