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Infineon

DDB6U75N16W1R

335W 69A 1.2kV IGBT Module Through Hole IGBT Modules RoHS

Through HoleROHS3 CompliantActive
Manufacturer
Infineon
Manufacturer part #
DDB6U75N16W1R
Store part #
C535072
Package / case
Through Hole
Category
IGBT Modules
Packaging
Tray
Datasheet (PDF)

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Out of stock

#C535072

Stock & price checked 43 h ago

QuantityUnit pricePack price
1+₹9,025.03₹9,025.03
24+₹8,728.62₹2,09,486.88
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  • Standard pack: 24 per tray
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Specifications

Pd - Power Dissipation
335W
Td(off)
370ns;440ns;460ns
Td(on)
80ns;85ns
Current - Collector(Ic)
69A
Collector-Emitter Breakdown Voltage (Vces)
1.2kV
Reverse Transfer Capacitance (Cres)
100pF
IGBT Type
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
5.8V
Gate Charge(Qg)
380nC@15V
Vce Saturation(VCE(sat))
1.85V;2.15V;2.25V
Switching Energy(Eoff)
3.1mJ;4.4mJ;4.9mJ
Turn-On Energy (Eon)
4.7mJ;5.8mJ;6mJ
Operating Temperature
-40℃~+150℃
Input Capacitance(Cies)
2.8nF

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
Moisture sensitivity
MSL 1 (unlimited)
ECCN
EAR99
Packaging
Tray
Standard pack
24 / Tray
Sold per
Piece
Minimum order
1
Unit weight
1 g

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