DG9411EDL-T1-GE3

Fabricated with high density CMOS technology, the device achieves low on resistance of 6 Ω and switch off capacitance of 7 pF at a 5 V power supply and low power consumption, and fast switching speeds. The DG9411E can handle both analog and digital signals and permits signals with amplitudes of up to V+ to be transmitted in either direction. Its control logic inputs can go over V+ up to 5.5 V. It features break before make switching performance. A powered-off protection circuit is built into the switch to prevent an abnormal current flow from COM pin to V+ during the power-down condition. Each output pin can withstand greater than 7 kV (human body model). Operation temperature is specified from -40 °C to +85 °C. The DG9411E is available in the compact SC-70-6L package.

Applications

• Battery powered devices
• Smartphones and tablets
• Consumer and computing
• Portable instrumentation
• Medical equipment

Key features

• Low switch on-resistance (6 Ω)
• 1.8 V to 5.5 V single supply operation
• Powered-off protection
• Control logic inputs can go over V+ up to 5.5 V
• Low parasitic capacitance, 7 pF at switch off
• Low charge injection, 1 pC
• Break before make switching
• Latch-up performance exceeds 200 mA per JESD 78
• ESD tested - 7000 V human body model (JS-001) - 1000 V charge device model (JS-002)