MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
Shenzhen Developer Microelec.Datasheet (PDF)
DP053N08BG
N-Channel 80V 120A 179W Surface Mount TO-263
TO-263RoHSActive
MOSFET N-CH 80V 120A TO-263
- Manufacturer
- Shenzhen Developer Microelec.
- Manufacturer part #
- DP053N08BG
- Store part #
- C5183070
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C5183070
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹73.04 | ₹73.04 |
| 10+ | ₹59.40 | ₹594.00 |
| 30+ | ₹52.47 | ₹1,574.10 |
| 100+ | ₹45.75 | ₹4,575.00 |
| 500+ | ₹39.88 | ₹19,940.00 |
| 1,000+ | ₹37.78 | ₹37,780.00 |
| 2,000+ | ₹37.15 | ₹74,300.00 |
| 4,000+ | ₹36.94 | ₹1,47,760.00 |
1 × ₹73.04
₹73.04
excl. GST
₹86.19 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
DP053N08BG
₹73.04 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 640pF
- Ciss-Input Capacitance
- 3.1nF
- Pd - Power Dissipation
- 179W
- Drain to Source Voltage
- 80V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 18pF
- RDS(on)
- 4.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 58nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2 g
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