MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDB0170N607L
N-Channel 60V 300A 3.8W 250W TO-263-7
TO-263-7ROHS3 CompliantActive
MOSFET N-CH 60V 300A TO-263-7
- Manufacturer
- onsemi
- Manufacturer part #
- FDB0170N607L
- Store part #
- C898536
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
188 in stock
#C898536
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹485.22 | ₹485.22 |
| 10+ | ₹462.47 | ₹4,624.70 |
| 30+ | ₹448.95 | ₹13,468.50 |
| 100+ | ₹435.21 | ₹43,521.00 |
| 500+ | ₹428.78 | ₹2,14,390.00 |
| 800+ | ₹425.99 | ₹3,40,792.00 |
1 × ₹485.22
₹485.22
excl. GST
₹572.56 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per reel
FDB0170N607L
₹485.22 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.235nF
- Ciss-Input Capacitance
- 19.25nF
- Pd - Power Dissipation
- 3.8W;250W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 300A
- Reverse Transfer Capacitance (Crss)
- 240pF
- RDS(on)
- 1.1mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 173nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.813 g
Overview
This N-Channel MOSFET is produced using advance PowerTrench process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
Key features
- Maximum r DS(on) = 1.4 mΩ at V GS = 10 V, I D = 39 A
- Fast switching speed
- Low gate charge
- Ultra-low R DS(on) achieved with high-performance trench technology
- High power and current handling capability
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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