MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDMC008N08C
N-Channel 80V 60A 57W Surface Mount PQFN-8(3.3x3.3)
PQFN-8(3.3x3.3)ROHS3 CompliantActive
MOSFET N-CH 80V 60A PQFN-8(3.3x3.3)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMC008N08C
- Store part #
- C890919
- Package / case
- PQFN-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C890919
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹138.21 | ₹138.21 |
| 10+ | ₹135.17 | ₹1,351.70 |
| 30+ | ₹132.99 | ₹3,989.70 |
| 100+ | ₹130.82 | ₹13,082.00 |
1 × ₹138.21
₹138.21
excl. GST
₹163.09 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMC008N08C
₹138.21 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 730pF
- Ciss-Input Capacitance
- 2.15nF
- Pd - Power Dissipation
- 57W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 30pF
- RDS(on)
- 19.3mΩ@6V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 29nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.02 g
Overview
This N-channel medium-voltage MOSFET is manufactured using the advanced PowerTrench® process with integrated shield gate technology. The process is optimized to minimize on-resistance while maintaining superior switching performance through a best-in-class soft body diode.
Applications
- Primary DC-DC MOSFET
- Synchronous rectifiers in DC-DC and AC-DC
- Motor drive
- Solar
Key features
- Shield Gate MOSFET technology
- Max rDS(on) = 7.8 mΩ at VGS = 10 V, ID = 21 A
- Max rDS(on) = 19.3 mΩ at VGS = 6 V, ID = 10 A
- Qrr 50% lower than other MOSFET suppliers
- Reduced switching noise/EMI
- MSL1 robust package design
- 100% UIl tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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