Varnitronics
FDMC86160 onsemi
onsemi

FDMC86160

N-Channel 100V 43A 54W Surface Mount Power-33

Power-33ROHS3 CompliantActive

MOSFET N-CH 100V 43A Power-33

Manufacturer
onsemi
Manufacturer part #
FDMC86160
Store part #
C605029
Package / case
Power-33
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

8 in stock

#C605029

Stock & price checked 22 h ago

QuantityUnit pricePack price
1+₹335.70₹335.70
10+₹286.93₹2,869.30
30+₹256.30₹7,689.00
100+₹225.06₹22,506.00
500+₹210.89₹1,05,445.00
1,000+₹204.84₹2,04,840.00

1 × ₹335.70

₹335.70

excl. GST

₹396.13 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

FDMC86160

₹335.70 for 1 + GST

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Specifications

Output Capacitance(Coss)
241pF
Ciss-Input Capacitance
1.29nF
Pd - Power Dissipation
54W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
100V
Current - Continuous Drain(Id)
43A
Reverse Transfer Capacitance (Crss)
20pF
RDS(on)
14mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
22nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.9V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.071 g

Overview

This N-Channel MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions.

Applications

  • Bridge Topologies
  • Synchronous Rectifier

Key features

  • Shielded Gate MOSFET Technology
  • Max rDS(on)=14 mΩ at VGS=10 V, ID=9 A
  • Max rDS(on)=23 mΩ at VGS=6 V, ID=7 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

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