Varnitronics
FDMC86160ET100 onsemi
onsemi

FDMC86160ET100

N-Channel 100V 43A 65W Surface Mount PQFN-8

PQFN-8ROHS3 CompliantActive

MOSFET N-CH 100V 43A PQFN-8

Manufacturer
onsemi
Manufacturer part #
FDMC86160ET100
Store part #
C890964
Package / case
PQFN-8
Packaging
Tape & Reel (TR)
Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

Out of stock

#C890964

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹436.85₹436.85
10+₹429.67₹4,296.70
30+₹424.89₹12,746.70
100+₹420.11₹42,011.00
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  • Standard pack: 3,000 per reel
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Specifications

Output Capacitance(Coss)
320pF
Ciss-Input Capacitance
1.29nF
Pd - Power Dissipation
65W
Operating Temperature
-55℃~+175℃
Drain to Source Voltage
100V
Current - Continuous Drain(Id)
43A
Reverse Transfer Capacitance (Crss)
20pF
RDS(on)
14mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
22nC
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.9V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.07 g

Overview

This N-channel MOSFET is manufactured using an advanced PowerTrench process with shielded gate technology. The process is optimized for on-resistance. This device is ideal for applications requiring ultra-low RDS(on) in a small footprint, such as high-performance VRM, POL, and ORing functions.

Applications

  • Bridge topology
  • Synchronous rectifier

Key features

  • Extended TJ rating: 175°C
  • Shield gate MOSFET technology
  • Max rDS(on) = 14 mΩ (VGS = 10 V, ID = 9 A)
  • Max rDS(on) = 23 mΩ (VGS = 6 V, ID = 7 A)
  • High-performance trench technology for ultra-low rDS(on)
  • Lead-free termination, RoHS compliant

Alternatives

Similar parts — check the datasheet before substituting.

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