MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS8333L
216W 40V 76A 3.1mΩ@10V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS
PQFN-8(5x6)ROHS3 CompliantActive
MOSFET N-CH 40V 76A PQFN-8(5x6)
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS8333L
- Store part #
- C330165
- Package / case
- PQFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,772 in stock
#C330165
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹57.46 | ₹57.46 |
| 10+ | ₹50.53 | ₹505.30 |
| 30+ | ₹47.06 | ₹1,411.80 |
| 100+ | ₹43.80 | ₹4,380.00 |
| 500+ | ₹41.63 | ₹20,815.00 |
| 1,000+ | ₹40.55 | ₹40,550.00 |
1 × ₹57.46
₹57.46
excl. GST
₹67.80 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS8333L
₹57.46 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.175nF
- Ciss-Input Capacitance
- 4.545nF
- Pd - Power Dissipation
- 216W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 76A
- Reverse Transfer Capacitance (Crss)
- 55pF
- RDS(on)
- 3.1mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 64nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.207 g
Overview
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low r<sub>DS(on)</sub>, fast switching speed, and body diode reverse recovery performance.
Applications
- OR-gate FET / load switch
- Synchronous rectification
- DC-DC conversion
Key features
- Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
- Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced combination of packaging and silicon technology for low rDS(on) and high efficiency
- Next-generation enhanced body diode technology with soft-recovery characteristics
- MSL1 robust package design
- 100% UIIs tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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