MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDMS86520
69W 60V 42A 6mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS
Power-56-8ROHS3 CompliantActive
MOSFET N-CH 60V 42A Power-56-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDMS86520
- Store part #
- C891104
- Package / case
- Power-56-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C891104
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹228.31 | ₹228.31 |
| 10+ | ₹191.68 | ₹1,916.80 |
| 30+ | ₹168.91 | ₹5,067.30 |
| 100+ | ₹145.28 | ₹14,528.00 |
| 500+ | ₹134.87 | ₹67,435.00 |
| 1,000+ | ₹130.32 | ₹1,30,320.00 |
1 × ₹228.31
₹228.31
excl. GST
₹269.41 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDMS86520
₹228.31 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 624pF
- Ciss-Input Capacitance
- 2.14nF
- Pd - Power Dissipation
- 69W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 42A
- Reverse Transfer Capacitance (Crss)
- 24pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 28nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.171 g
Overview
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low on-resistance r<sub>DS(on)</sub>, fast switching speed, and body diode reverse recovery performance.
Applications
- Main DC-DC switching
- Motor bridge switching
- Synchronous rectifier
Key features
- Maximum on-resistance rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A
- Maximum on-resistance rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A
- Advanced packaging combined with silicon technology for low rDS(on) and high efficiency
- Next-generation enhanced body diode technology with soft-recovery characteristics
- MSL1 robust package design
- 100% UII tested
- RoHS compliant
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