MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
26,12,850 in stock
onsemiDatasheet (PDF)
FDV301N
N-Channel 25V 0.22A 0.35W Surface Mount SOT-23
PopularSOT-23ROHS3 CompliantActive
MOSFET N-CH 25V 0.22A SOT-23
- Manufacturer
- onsemi
- Manufacturer part #
- FDV301N
- Store part #
- C15310
- Package / case
- SOT-23
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6,30,880 in stock
#C15310
Stock & price checked 18 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 10+ | ₹5.00 | ₹50.00 |
| 100+ | ₹4.07 | ₹407.00 |
| 300+ | ₹3.60 | ₹1,080.00 |
| 3,000+ | ₹2.58 | ₹7,740.00 |
| 6,000+ | ₹2.45 | ₹14,700.00 |
| 9,000+ | ₹2.35 | ₹21,150.00 |
10 × ₹5.00
₹50.00
excl. GST
₹59.00 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDV301N
₹50.00 for 10 + GST
Specifications
- Output Capacitance(Coss)
- 6pF
- Ciss-Input Capacitance
- 9.5pF
- Pd - Power Dissipation
- 350mW
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 25V
- Current - Continuous Drain(Id)
- 220mA
- Reverse Transfer Capacitance (Crss)
- 1.3pF
- RDS(on)
- 5Ω@2.7V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 700pC@4.5V
- Vgs
- ±8V
- Gate Threshold Voltage (Vgs(th))
- 1.06V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 10 (multiples of 10)
- Unit weight
- 0.035 g
Overview
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
Key features
- 25 V, 0.22 A continuous, 0.5 A Peak
- RDS(ON) = 5 Ω @ VGS = 2.7 V
- RDS(ON) = 4 Ω @ VGS = 4.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits
- VGS(th) < 1.06 V
- Gate - Source Zener for ESD ruggedness
- > GKV Human Body Model
- Replace multiple NPN digital transistors with one DMOS FET
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | FDV301N#C5223668Slkor · SOT-23 | Slkor | SOT-23 | 5,960 | ₹9.64 · 5,960 in stock | View |
 | FDV301N-JSM#C18190755JSMSEMI · SOT-23-3 | JSMSEMI | SOT-23-3 | 1,310 | ₹8.07 · 1,310 in stock | View |
 | TPM3008NES3#C22358685TECH PUBLIC · SOT-23 | TECH PUBLIC | SOT-23 | 2,340 | ₹6.26 · 2,340 in stock | View |
 | TPM2103NE4KS3#C42436634TECH PUBLIC · SOT-23 | TECH PUBLIC | SOT-23 | 3,000 | ₹15.48 · 3,000 in stock | View |
 | FDV301N#C20069151R+O · SOT-23 | R+O | SOT-23 | 8,240 | ₹5.93 · 8,240 in stock | View |
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