Infineon/CYPRESS

FM28V020-SGTR

256Kbit 15MHz Parallel Port (Parallel) SOIC-28-300mil Memory RoHS

SOIC-28-300milROHS3 CompliantActive

256-Kbit F-RAM Memory

Manufacturer: Infineon/CYPRESS
Manufacturer part #: FM28V020-SGTR
Store part #: C54935
Package / case: SOIC-28-300mil
Category: Memory
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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1,000 in stock

#C54935

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹1,389.40	₹1,389.40
10+	₹1,224.04	₹12,240.40
30+	₹1,016.74	₹30,502.20
100+	₹932.21	₹93,221.00

Quantity (min 1)

1 × ₹1,389.40

₹1,389.40

excl. GST

₹1,639.49 incl. 18% GST

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Standard pack: 1,000 per reel

FM28V020-SGTR

₹1,389.40 for 1 + GST

Specifications

Operating Temperature: -40℃~+85℃
Memory Size: 256Kbit
Voltage - Supply: 2V~3.6V;5mA
Program / Erase Cycles: 100,000,000,000,000 Cycles
Clock Frequency: 15MHz
Data Retention - TDR (Year): 151 years
Standby Supply Current: 90uA
Interface: Parallel Port (Parallel)

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.91 g

Overview

The FM28V020 is a 32Kx8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM28V020 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by CE(overline) or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28v020 ideal for nonvolatile memory applications requiring frequent or rapid writes. The device is available in a 28-pin SOIC, 28-pin TSOP I and 32-pin TSOP I surface mount packages. Device specifications are guaranteed over the industrial temperature range -40℃ to +85℃

Key features

256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
High-endurance 100 trillion (10¹⁴) read/writes
151-year data retention
NoDelay™ writes
Page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 32K × 8 SRAM pinout
70-ns access time, 140-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 5mA (typ)
Standby current 90μA (typ)
Low-voltage operation: VDD = 2.0V to 3.6V
Industrial temperature: -40°C to +85°C
28-pin small outline integrated circuit (SOIC) package
28-pin thin small outline package (TSOP) Type I
32-pin thin small outline package (TSOP) Type I
Restriction of hazardous substances (RoHS) compliant