MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FQA90N08
N-Channel 80V 90A 214W Through Hole TO-3PN
TO-3PNROHS3 CompliantDiscontinued
MOSFET N-CH 80V 90A TO-3PN
- Manufacturer
- onsemi
- Manufacturer part #
- FQA90N08
- Store part #
- C898225
- Package / case
- TO-3PN
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
220 in stock
#C898225
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹357.08 | ₹357.08 |
| 10+ | ₹340.18 | ₹3,401.80 |
| 30+ | ₹330.22 | ₹9,906.60 |
| 90+ | ₹320.25 | ₹28,822.50 |
| 510+ | ₹315.48 | ₹1,60,894.80 |
| 1,200+ | ₹313.54 | ₹3,76,248.00 |
1 × ₹357.08
₹357.08
excl. GST
₹421.35 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
FQA90N08
₹357.08 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 90A
- Ciss-Input Capacitance
- 3.25nF
- Pd - Power Dissipation
- 214W
- Reverse Transfer Capacitance (Crss)
- 260pF
- RDS(on)
- 16mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 110nC@64V
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Discontinued
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.8 g
Overview
This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Applications
- Switched mode power supplies
- Audio amplifier
- DC motor control
- Variable switching power applications
Key features
- 90 A, 80 V, RDS(on)=16 mΩ (Max) @ VGS=10 V, ID=45 A
- Low Gate Charge (Typ. 84 nC)
- Low Crss (Typ. 200 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
Alternatives
Similar parts — check the datasheet before substituting.
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