MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
26,12,850 in stock
MASPOWERDatasheet (PDF)
MS200N10HIB0
100V 200A 320W 6.8mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs
TO-3PRoHSActive
- Manufacturer
- MASPOWER
- Manufacturer part #
- MS200N10HIB0
- Store part #
- C55042359
- Package / case
- TO-3P
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
30 in stock
#C55042359
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹340.71 | ₹340.71 |
| 10+ | ₹288.40 | ₹2,884.00 |
| 30+ | ₹255.54 | ₹7,666.20 |
| 90+ | ₹222.03 | ₹19,982.70 |
| 510+ | ₹206.89 | ₹1,05,513.90 |
| 990+ | ₹200.20 | ₹1,98,198.00 |
1 × ₹340.71
₹340.71
excl. GST
₹402.04 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
MS200N10HIB0
₹340.71 for 1 + GST
Specifications
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 200A
- Output Capacitance(Coss)
- 660pF
- Ciss-Input Capacitance
- 5.5nF
- Pd - Power Dissipation
- 320W
- Reverse Transfer Capacitance (Crss)
- 100pF
- RDS(on)
- 6.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 125nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.923 g
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