MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
GOSEMICONDatasheet (PDF)
GBS65060TOA
N-Channel 650V 50A 329W Through Hole TO-220
TO-220RoHSActive
MOSFET N-CH 650V 50A TO-220
- Manufacturer
- GOSEMICON
- Manufacturer part #
- GBS65060TOA
- Store part #
- C7426972
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
35 in stock
#C7426972
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹512.40 | ₹512.40 |
| 10+ | ₹444.59 | ₹4,445.90 |
| 50+ | ₹404.40 | ₹20,220.00 |
| 100+ | ₹363.55 | ₹36,355.00 |
| 500+ | ₹344.85 | ₹1,72,425.00 |
| 1,000+ | ₹336.39 | ₹3,36,390.00 |
1 × ₹512.40
₹512.40
excl. GST
₹604.63 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
GBS65060TOA
₹512.40 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 70pF
- Current - Continuous Drain(Id)
- 50A
- Ciss-Input Capacitance
- 4.3nF
- Pd - Power Dissipation
- 329W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 55mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
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