Varnitronics
GigaDevice Semicon Beijing

GD25Q16ENIGR

16Mbit 2.7V~3.6V 104MHz SPI USON-8(3x4) Memory RoHS

USON-8(3x4)ROHS3 CompliantActive

GD32 MCU

Manufacturer part #
GD25Q16ENIGR
Store part #
C5749719
Package / case
USON-8(3x4)
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,178 in stock

#C5749719

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹138.12₹138.12
10+₹114.70₹1,147.00
30+₹101.70₹3,051.00
100+₹87.17₹8,717.00
500+₹80.87₹40,435.00
1,000+₹77.85₹77,850.00

1 × ₹138.12

₹138.12

excl. GST

₹162.98 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

GD25Q16ENIGR

₹138.12 for 1 + GST

Specifications

Operating Temperature
-40℃~+85℃
Memory Size
16Mbit
Voltage - Supply
2.7V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
104MHz
Data Retention - TDR (Year)
20 Years
Standby Supply Current
5uA
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.1 g

Overview

Applications

  • TWS earphone charging cases
  • Earphones and hearing aids
  • Portable medical devices
  • Patient monitors
  • Low-power applications
  • Wireless infrastructure
  • Telecom/network cards
  • Industrial applications
  • IPC
  • Point of load
  • Three-phase BLDC and PMSM motors
  • Power tools
  • Robotics and RC toys
  • Industrial automation
  • Battery management
  • Battery chargers and AFE
  • Laptops
  • Cleaning robots
  • RC aircraft and drones
  • Energy storage

Key features

  • 3V Supply Voltage: 2.7V~3.6V
  • High-Speed Clock Frequency:
  • Fast Read up to 133MHz
  • Quad I/O data transfer up to 532Mbit/s
  • Flexible Memory Architecture:
  • 2K-byte page for read and program
  • 128K bytes per block for erase
  • Enhanced Access Performance: 2K-byte cache for fast random read
  • Advanced SPI NAND Features:
  • On-chip ECC
  • DTR support
  • 1.8V Supply Voltage: 1.7V~2.0V
  • High-Speed Clock Frequency:
  • Fast Read up to 104MHz
  • Quad I/O data transfer up to 416Mbit/s
  • Flexible Memory Architecture:
  • 2K-byte page for read and program
  • 128K bytes per block for erase
  • Enhanced Access Performance: 2K-byte cache for fast random read
  • Advanced SPI NAND Features:
  • On-chip ECC
  • DTR support
  • Deep power-down mode support
  • 3V Supply: 2.7V ~ 3.6V
  • Density: 1Gb / 2Gb / 4Gb / 8Gb
  • Page Size: 2K+64 Bytes / 2K+128 Bytes / 4K+256 Bytes
  • Array to Register Time: 25us
  • I/O Read Performance: 12ns / 20ns / 25ns
  • Bus Width: x8 / x16 option
  • Temperature Range: -40℃ to 85℃ or -40℃ to 105℃
  • ONFI 1.0 compatible
  • 1.8V Supply: 1.7V ~ 1.95V
  • Density: 1Gb / 2Gb / 4Gb / 8Gb
  • Page Size: 2K+64 Bytes / 2K+128 Bytes

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