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GD25Q32EWIGR GigaDevice Semicon Beijing
GigaDevice Semicon Beijing

GD25Q32EWIGR

32Mbit 2.7V~3.6V 133MHz SPI WSON-8-EP(5x6) Memory RoHS

WSON-8-EP(5x6)ROHS3 CompliantActive

GD32 MCU

Manufacturer part #
GD25Q32EWIGR
Store part #
C2928892
Package / case
WSON-8-EP(5x6)
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,420 in stock

#C2928892

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹147.66₹147.66
10+₹121.86₹1,218.60
30+₹107.76₹3,232.80
100+₹91.72₹9,172.00
500+₹84.57₹42,285.00
1,000+₹81.52₹81,520.00

1 × ₹147.66

₹147.66

excl. GST

₹174.24 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

GD25Q32EWIGR

₹147.66 for 1 + GST

Specifications

Operating Temperature
-40℃~+85℃
Memory Size
32Mbit
Voltage - Supply
2.7V~3.6V
Clock Frequency
133MHz
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
3A991B1A
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.269 g

Overview

Applications

  • TWS earphone charging cases
  • Earphones and hearing aids
  • Portable medical devices
  • Patient monitors
  • Low-power applications
  • Wireless infrastructure
  • Telecom/network cards
  • Industrial applications
  • IPC
  • Point of load
  • Three-phase BLDC and PMSM motors
  • Power tools
  • Robotics and RC toys
  • Industrial automation
  • Battery management
  • Battery chargers and AFE
  • Laptops
  • Cleaning robots
  • RC aircraft and drones
  • Energy storage

Key features

  • 3V Supply Voltage: 2.7V~3.6V
  • High-Speed Clock Frequency:
  • Fast Read up to 133MHz
  • Quad I/O data transfer up to 532Mbit/s
  • Flexible Memory Architecture:
  • 2K-byte page for read and program
  • 128K bytes per block for erase
  • Enhanced Access Performance: 2K-byte cache for fast random read
  • Advanced SPI NAND Features:
  • On-chip ECC
  • DTR support
  • 1.8V Supply Voltage: 1.7V~2.0V
  • High-Speed Clock Frequency:
  • Fast Read up to 104MHz
  • Quad I/O data transfer up to 416Mbit/s
  • Flexible Memory Architecture:
  • 2K-byte page for read and program
  • 128K bytes per block for erase
  • Enhanced Access Performance: 2K-byte cache for fast random read
  • Advanced SPI NAND Features:
  • On-chip ECC
  • DTR support
  • Deep power-down mode support
  • 3V Supply: 2.7V ~ 3.6V
  • Density: 1Gb / 2Gb / 4Gb / 8Gb
  • Page Size: 2K+64 Bytes / 2K+128 Bytes / 4K+256 Bytes
  • Array to Register Time: 25us
  • I/O Read Performance: 12ns / 20ns / 25ns
  • Bus Width: x8 / x16 option
  • Temperature Range: -40℃ to 85℃ or -40℃ to 105℃
  • ONFI 1.0 compatible
  • 1.8V Supply: 1.7V ~ 1.95V
  • Density: 1Gb / 2Gb / 4Gb / 8Gb
  • Page Size: 2K+64 Bytes / 2K+128 Bytes

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