MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HuixinDatasheet (PDF)
H10N65F
650V 10A 32W 800mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
MOSFET N-CH 650V 10A TO-220F
- Manufacturer
- Huixin
- Manufacturer part #
- H10N65F
- Store part #
- C49823498
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C49823498
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹109.62 | ₹109.62 |
| 10+ | ₹93.28 | ₹932.80 |
| 50+ | ₹85.12 | ₹4,256.00 |
| 100+ | ₹77.17 | ₹7,717.00 |
| 500+ | ₹72.22 | ₹36,110.00 |
| 1,000+ | ₹69.87 | ₹69,870.00 |
1 × ₹109.62
₹109.62
excl. GST
₹129.35 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
H10N65F
₹109.62 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 140pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 1.62nF
- Pd - Power Dissipation
- 32W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 800mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.048 g
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