MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HL(Haolin Elec)Datasheet (PDF)
HB3510P
110W 100V 50A 38mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSSold out at source
100V N-Channel MOSFET, 50A, 100V
- Manufacturer
- HL(Haolin Elec)
- Manufacturer part #
- HB3510P
- Store part #
- C271448
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
15 in stock
#C271448
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹41.98 | ₹209.90 |
| 50+ | ₹32.37 | ₹1,618.50 |
| 150+ | ₹28.58 | ₹4,287.00 |
| 500+ | ₹23.84 | ₹11,920.00 |
| 2,500+ | ₹21.74 | ₹54,350.00 |
| 5,000+ | ₹20.47 | ₹1,02,350.00 |
5 × ₹41.98
₹209.90
excl. GST
₹247.68 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
HB3510P
₹209.90 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 608pF
- Ciss-Input Capacitance
- 1.489nF
- Pd - Power Dissipation
- 110W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 50A
- Reverse Transfer Capacitance (Crss)
- 608pF
- RDS(on)
- 38mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 2.24 g
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