MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
R+ODatasheet (PDF)
HE10N082SG
125W 100V 110A 6.5mΩ@10V 1 N-channel N-Channel TO-220CB Single FETs, MOSFETs
TO-220CBRoHSActive
- Manufacturer
- R+O
- Manufacturer part #
- HE10N082SG
- Store part #
- C52766428
- Package / case
- TO-220CB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,886 in stock
#C52766428
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹62.51 | ₹62.51 |
| 10+ | ₹55.78 | ₹557.80 |
| 50+ | ₹52.52 | ₹2,626.00 |
| 100+ | ₹49.27 | ₹4,927.00 |
| 500+ | ₹47.10 | ₹23,550.00 |
| 1,000+ | ₹46.24 | ₹46,240.00 |
1 × ₹62.51
₹62.51
excl. GST
₹73.76 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HE10N082SG
₹62.51 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 729pF
- Ciss-Input Capacitance
- 2.312nF
- Pd - Power Dissipation
- 125W
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 110A
- Reverse Transfer Capacitance (Crss)
- 25.6pF
- RDS(on)
- 6.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 40nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.05 g
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