MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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26,12,850 in stock
HXY MOSFETDatasheet (PDF)
HFDP083N15AF102
N-Channel 150V 120A 178.6W Through Hole TO-220
TO-220RoHSActive
MOSFET N-CH 150V 120A TO-220
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HFDP083N15AF102
- Store part #
- C42401102
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C42401102
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹182.56 | ₹182.56 |
| 10+ | ₹151.56 | ₹1,515.60 |
| 50+ | ₹131.18 | ₹6,559.00 |
| 100+ | ₹112.10 | ₹11,210.00 |
| 500+ | ₹103.43 | ₹51,715.00 |
| 1,000+ | ₹99.53 | ₹99,530.00 |
1 × ₹182.56
₹182.56
excl. GST
₹215.42 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
HFDP083N15AF102
₹182.56 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 268pF
- Ciss-Input Capacitance
- 3.31nF
- Pd - Power Dissipation
- 178.6W
- Drain to Source Voltage
- 150V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 9.4pF
- RDS(on)
- 9.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 45nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.52 g
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