MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUASHUODatasheet (PDF)
HSBB4600
20V 40W 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs
PDFN-8(3.3x3.3)RoHSActive
MOSFET N/P-CH 20V 12A PDFN-8(3.3x3.3)
- Manufacturer
- HUASHUO
- Manufacturer part #
- HSBB4600
- Store part #
- C51025847
- Package / case
- PDFN-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
100 in stock
#C51025847
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹33.66 | ₹168.30 |
| 50+ | ₹26.43 | ₹1,321.50 |
| 150+ | ₹23.34 | ₹3,501.00 |
| 500+ | ₹19.47 | ₹9,735.00 |
| 2,500+ | ₹17.75 | ₹44,375.00 |
| 5,000+ | ₹16.71 | ₹83,550.00 |
5 × ₹33.66
₹168.30
excl. GST
₹198.59 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
HSBB4600
₹168.30 for 5 + GST
Specifications
- Drain to Source Voltage
- 20V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 12A;10A
- Output Capacitance(Coss)
- 225pF;194pF
- Ciss-Input Capacitance
- 1.65nF;1.25nF
- Pd - Power Dissipation
- 40W
- Reverse Transfer Capacitance (Crss)
- 203pF;158pF
- RDS(on)
- 7.8mΩ@4.5V;17mΩ@4.5V
- Number
- 1 N-Channel + 1 P-Channel
- Gate Charge(Qg)
- 20nC@4.5V;33nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 700mV
- Type
- N-Channel + P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.084 g
Same category
