MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUASHUODatasheet (PDF)
HSBG2N7002K
60V 500mA 1.1W 1.4Ω@10V 1 N-channel N-Channel DFN1006-3 Single FETs, MOSFETs
DFN1006-3RoHSActive
- Manufacturer
- HUASHUO
- Manufacturer part #
- HSBG2N7002K
- Store part #
- C53243978
- Package / case
- DFN1006-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
80 in stock
#C53243978
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 20+ | ₹3.52 | ₹70.40 |
| 200+ | ₹2.77 | ₹554.00 |
| 600+ | ₹2.34 | ₹1,404.00 |
| 2,000+ | ₹2.09 | ₹4,180.00 |
| 10,000+ | ₹1.88 | ₹18,800.00 |
| 20,000+ | ₹1.76 | ₹35,200.00 |
20 × ₹3.52
₹70.40
excl. GST
₹83.07 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 10,000 per reel
HSBG2N7002K
₹70.40 for 20 + GST
Specifications
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 8.5pF
- Current - Continuous Drain(Id)
- 500mA
- Ciss-Input Capacitance
- 28pF
- Pd - Power Dissipation
- 1.1W
- Reverse Transfer Capacitance (Crss)
- 2pF
- RDS(on)
- 1.4Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 850pC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 10,000 / Reel
- Sold per
- Piece
- Minimum order
- 20 (multiples of 20)
- Unit weight
- 0.012 g
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