MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
HXY MOSFETDatasheet (PDF)
HSCTWA60N12G24AG
1.2kV 63A 283W 43mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs
TO-247-4LRoHSSold out at source
SiC Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HSCTWA60N12G24AG
- Store part #
- C42389100
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C42389100
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,443.34 | ₹1,443.34 |
| 10+ | ₹1,240.18 | ₹12,401.80 |
| 30+ | ₹1,116.39 | ₹33,491.70 |
| 90+ | ₹1,012.74 | ₹91,146.60 |
1 × ₹1,443.34
₹1,443.34
excl. GST
₹1,703.14 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
HSCTWA60N12G24AG
₹1,443.34 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Current - Continuous Drain(Id)
- 63A
- Output Capacitance(Coss)
- 129pF
- Ciss-Input Capacitance
- 3.357nF
- Pd - Power Dissipation
- 283W
- Reverse Transfer Capacitance (Crss)
- 8pF
- RDS(on)
- 43mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 118nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.6V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 3 (168 hours)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.28 g
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