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HTCSEMIDatasheet (PDF)
HT165N1200AKZ
1.2kV 165A 517W Through Hole TO-247-4L
TO-247-4LROHS CompliantActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT165N1200AKZ
- Store part #
- C47326418
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
19 in stock
#C47326418
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,844.29 | ₹1,844.29 |
| 10+ | ₹1,819.40 | ₹18,194.00 |
| 30+ | ₹1,776.48 | ₹53,294.40 |
| 90+ | ₹1,738.92 | ₹1,56,502.80 |
1 × ₹1,844.29
₹1,844.29
excl. GST
₹2,176.26 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT165N1200AKZ
₹1,844.29 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Current - Continuous Drain(Id)
- 165A
- Output Capacitance(Coss)
- 202pF
- Ciss-Input Capacitance
- 7.407nF
- Pd - Power Dissipation
- 517W
- Reverse Transfer Capacitance (Crss)
- 21pF
- RDS(on)
- 17mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 293nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.8V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.453 g
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