MDD(Microdiode Semiconductor)
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HTCSEMIDatasheet (PDF)
HT63N1200ADZ
1.2kV 63A 283W Through Hole TO-247-3
TO-247-3ROHS CompliantActive
Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT63N1200ADZ
- Store part #
- C47326414
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
28 in stock
#C47326414
Stock & price checked 26 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,108.55 | ₹1,108.55 |
| 10+ | ₹956.48 | ₹9,564.80 |
| 30+ | ₹863.75 | ₹25,912.50 |
| 90+ | ₹786.01 | ₹70,740.90 |
1 × ₹1,108.55
₹1,108.55
excl. GST
₹1,308.09 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT63N1200ADZ
₹1,108.55 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Current - Continuous Drain(Id)
- 63A
- Output Capacitance(Coss)
- 129pF
- Ciss-Input Capacitance
- 3.357nF
- Pd - Power Dissipation
- 283W
- Reverse Transfer Capacitance (Crss)
- 8pF
- RDS(on)
- 43mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 114nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.6V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.107 g
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