MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
HUAYIDatasheet (PDF)
HY3912W
N-Channel 125V 190A 349W Through Hole TO-247A-3L
TO-247A-3LROHS CompliantActive
MOSFET N-CH 125V 190A TO-247A-3L
- Manufacturer
- HUAYI
- Manufacturer part #
- HY3912W
- Store part #
- C2827227
- Package / case
- TO-247A-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
160 in stock
#C2827227
Stock & price checked 30 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹196.97 | ₹196.97 |
| 10+ | ₹162.73 | ₹1,627.30 |
| 30+ | ₹144.09 | ₹4,322.70 |
| 90+ | ₹122.85 | ₹11,056.50 |
| 660+ | ₹113.54 | ₹74,936.40 |
| 990+ | ₹109.43 | ₹1,08,335.70 |
1 × ₹196.97
₹196.97
excl. GST
₹232.42 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
HY3912W
₹196.97 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 750pF
- Ciss-Input Capacitance
- 7.348nF
- Pd - Power Dissipation
- 349W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 125V
- Current - Continuous Drain(Id)
- 190A
- Reverse Transfer Capacitance (Crss)
- 465pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 185nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.66 g
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