MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HUAYIDatasheet (PDF)
HY5608W
N-Channel 80V 360A 500W Through Hole TO-247A-3L
TO-247A-3LROHS CompliantActive
MOSFET N-CH 80V 360A TO-247A-3L
- Manufacturer
- HUAYI
- Manufacturer part #
- HY5608W
- Store part #
- C2760540
- Package / case
- TO-247A-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
369 in stock
#C2760540
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹347.78 | ₹347.78 |
| 10+ | ₹303.99 | ₹3,039.90 |
| 30+ | ₹227.01 | ₹6,810.30 |
| 90+ | ₹198.82 | ₹17,893.80 |
| 660+ | ₹186.25 | ₹1,22,925.00 |
| 990+ | ₹180.83 | ₹1,79,021.70 |
1 × ₹347.78
₹347.78
excl. GST
₹410.38 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
HY5608W
₹347.78 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.714nF
- Ciss-Input Capacitance
- 14.715nF
- Pd - Power Dissipation
- 500W
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 360A
- Reverse Transfer Capacitance (Crss)
- 853pF
- RDS(on)
- 2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 365nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.767 g
Same category
