MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HUAYIDatasheet (PDF)
HYG050N13NS1P
375W 135V 200A 4mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS
TO-220FB-3LROHS CompliantActive
N-Channel Enhancement Mode MOSFET
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG050N13NS1P
- Store part #
- C5121328
- Package / case
- TO-220FB-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C5121328
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹316.82 | ₹316.82 |
| 10+ | ₹268.15 | ₹2,681.50 |
| 40+ | ₹237.73 | ₹9,509.20 |
| 100+ | ₹206.44 | ₹20,644.00 |
| 500+ | ₹192.31 | ₹96,155.00 |
| 1,000+ | ₹186.23 | ₹1,86,230.00 |
1 × ₹316.82
₹316.82
excl. GST
₹373.85 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 20 per tube
HYG050N13NS1P
₹316.82 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 905pF
- Ciss-Input Capacitance
- 11.687nF
- Pd - Power Dissipation
- 375W
- Drain to Source Voltage
- 135V
- Current - Continuous Drain(Id)
- 200A
- Reverse Transfer Capacitance (Crss)
- 176pF
- RDS(on)
- 4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 165nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 20 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.28 g
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