MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HYG060N08NS1B
125W 80V 105A 6mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs
TO-263-2RoHSActive
MOSFET N-CH 80V 105A TO-263-2
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG060N08NS1B
- Store part #
- C2925049
- Package / case
- TO-263-2
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
59 in stock
#C2925049
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹63.03 | ₹63.03 |
| 10+ | ₹50.21 | ₹502.10 |
| 30+ | ₹44.77 | ₹1,343.10 |
| 100+ | ₹38.04 | ₹3,804.00 |
| 500+ | ₹31.30 | ₹15,650.00 |
| 800+ | ₹29.56 | ₹23,648.00 |
1 × ₹63.03
₹63.03
excl. GST
₹74.38 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per reel
HYG060N08NS1B
₹63.03 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.19nF
- Ciss-Input Capacitance
- 2.95nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 105A
- Reverse Transfer Capacitance (Crss)
- 60pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 48nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.42 g
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