MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HUAYIDatasheet (PDF)
HYG068N08NR1P
N-Channel 80V 160A 268W Through Hole TO-220FB-3
TO-220FB-3ROHS CompliantActive
MOSFET N-CH 80V 160A TO-220FB-3
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG068N08NR1P
- Store part #
- C2830700
- Package / case
- TO-220FB-3
- Category
- Single FETs, MOSFETs
- Packaging
- Box-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C2830700
Stock & price checked 15 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹125.94 | ₹125.94 |
| 10+ | ₹104.64 | ₹1,046.40 |
| 30+ | ₹93.87 | ₹2,816.10 |
| 100+ | ₹83.32 | ₹8,332.00 |
| 500+ | ₹69.54 | ₹34,770.00 |
| 1,000+ | ₹66.10 | ₹66,100.00 |
1 × ₹125.94
₹125.94
excl. GST
₹148.61 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 1,000 per box
HYG068N08NR1P
₹125.94 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 566pF
- Ciss-Input Capacitance
- 3.722nF
- Pd - Power Dissipation
- 268W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 160A
- Reverse Transfer Capacitance (Crss)
- 231pF
- RDS(on)
- 7.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 84nC
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Box-packed
- Standard pack
- 1,000 / Box
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.08 g
Same category
